The SS8550 is a PNP bipolar junction transistor (BJT) that is commonly used in low-power amplification and switching applications. For the SS8550, it typically ranges from 100 to 300 megahertz (MHz).

Transition Frequency (ft): The transition frequency indicates the maximum frequency at which the transistor can effectively amplify signals. For the SS8550, it typically ranges from 120 to 320, depending on the specific conditions and biasing. For the SS8550, it is typically around 900 milliwatts (mW).ĭC Current Gain (hfe): The DC current gain, or hfe, represents the amplification capability of the transistor. Power Dissipation (Pd): The maximum power that the transistor can handle without exceeding its specified temperature limits. This value indicates the maximum current that can flow through the collector terminal of the transistor when it is fully turned on.Ĭollector-Emitter Voltage (Vceo): The maximum voltage that can be applied between the collector and the emitter terminal when the base terminal is open-circuited. Here are some key specifications of the SS8550 transistor:Ĭollector Current (Ic): The maximum collector current is typically around 1.5 amperes (A). The SS8550 is a specific type of small signal PNP transistor commonly used for amplification and switching applications. TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR TO-92 Plastic-Encapsulate Transistors (PNP) Plastic-Encapsulate Transistors PNP Silicon Small and medium-sized power amplifier, medium power drive and switching applications

2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

Ss8550 proteus library